simple drive requirement bv dss -20v small package outline r ds(on) 65m surface mount device i d -4.2a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-amb maximum thermal resistance, junction-ambient 3 90 /w -55 to 150 linear derating factor 1.38 -55 to 150 thermal data parameter total power dissipation operating junction temperature range storage temperature range continuous drain current 3 , @v gs =-4.5v -3.4 pulsed drain current 1 -10 parameter drain-source voltage gate-source voltage continuous drain current 3 , @v gs =-4.5v AP2305BGN-HF rating - 20 + 12 -4.2 0.01 advanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the sot-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s d g s sot-23 product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
AP2305BGN-HF electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-4.5a - - 53 m ? v gs =-4.5v, i d =-4.2a - - 65 m ? v gs =-2.5v, i d =-2.0a - - 100 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.5 - -1.16 v g fs forward transconductance v ds =-5v, i d =-4a - 14 - s i dss drain-source leakage current v ds =-20v, v gs =0v - - -1 ua drain-source leakage current (t j =55 o c) v ds =-16v, v gs =0v - - -10 ua i gss gate-source leakage v gs = + 12v, v ds =0v - - + 100 na q g total gate charge 2 i d =-4a - 13 21 nc q gs gate-source charge v ds =-16v - 1.4 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 4 - nc t d(on) turn-on delay time 2 v ds =-10v - 8 - ns t r rise time i d =-1a - 17 - ns t d(off) turn-off delay time r g =3.3 ,v gs =-5v - 24 - ns t f fall time r d =10 -33- ns c iss input capacitance v gs =0v - 920 1470 pf c oss output capacitance v ds =-20v - 90 - pf c rss reverse transfer capacitance f=1.0mhz - 85 - pf r g gate resistance f=1.0mhz - 4.5 6.8 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.2a, v gs =0v - - -1.2 v trr reverse recovery time 2 i s =-4a, v gs =0v, - 27 - ns qrr reverse recovery charge di/dt=100a/s - 14 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 270 /w when mounted on min. copper pad. product specification 2 of 2 sales@twtysemi.com http://www.twtysemi.com 4008-318-123
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